AO4712 v ds i d (at v gs =10v) 13a r ds(on) (at v gs =10v) < 11m w r ds(on) (at v gs = 4.5v) < 14m w symbol v ds srfet tm AO4712 uses advanced trench technology with a monolithically integrated schottky diode to provi de excellent r ds(on) ,and low gate charge. this device is suitable for use as a low side fet in smps, load switching and general purpose applications. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 30v drain-source voltage 30 g d s srfet tm s oft r ecovery mos fet : integrated schottky diode v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r q jl maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 17 75 24 t a =25c t a =70c power dissipation b p d avalanche energy l=0.1mh c pulsed drain current c continuous drain current t a =25c mj avalanche current c 11 a 15 a i d 13 10 68 v v 12 gate-source voltage drain-source voltage 30 units parameter typ max c/w r q ja 32 60 40 maximum junction-to-ambient a thermal characteristics w 3.1 2 t a =70c junction and storage temperature range -55 to 150 c www.freescale.net.cn 1/6 30v n-channel mosfet general description features
symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 0.5 t j =125c 100 i gss 100 na v gs(th) gate threshold voltage 1.1 1.65 2.1 v i d(on) 68 a 9 11 t j =125c 13 16 10.7 14 m w g fs 80 s v sd 0.4 0.7 v i s 5 a c iss 930 1170 1400 pf c oss 90 128 170 pf c rss 45 89 125 pf r g 0.7 1.4 2.1 w q g (10v) 16 20 24 nc q g (4.5v) 7 8.7 10.5 nc q gs 3.2 nc q gd 3 nc t d(on) 6 ns t 2.4 ns electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage on state drain current i d =1ma, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =13a r ds(on) static drain-source on-resistance i dss ma v ds =v gs i d =250 m a v ds =0v, v gs = 12v zero gate voltage drain current gate-body leakage current m w i s =1a,v gs =0v v ds =5v, i d =13a v gs =4.5v, i d =11a forward transconductance diode forward voltage turn-on rise time maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters v =10v, v =15v, r =1.2 w , reverse transfer capacitance v gs =0v, v ds =15v, f=1mhz switching parameters gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =15v, i d =13a gate source charge gate drain charge total gate charge t r 2.4 ns t d(off) 23 ns t f 4 ns t rr 5.5 7 8.5 ns q rr 5 6.5 8 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time body diode reverse recovery charge i f =13a, di/dt=500a/ m s turn-on rise time turn-off delaytime i f =13a, di/dt=500a/ m s turn-off fall time v gs =10v, v ds =15v, r l =1.2 w , r gen =3 w a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedance from junction t o lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedance which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150 c. the soa curve provides a single pulse rating. www.freescale.net.cn 2/6 AO4712 30v n-channel mosfet
typical electrical and thermal characteristics 17 5 2 10 0 18 0 5 10 15 20 25 30 35 1.5 2 2.5 3 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 7 8 9 10 11 12 13 1 6 11 16 21 26 r ds(on) (m w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =11a v gs =10v i d =13a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 5 10 15 20 25 30 35 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =2.25v 2.5v 3v 10v 2.75v 40 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 0 5 10 15 20 25 2 4 6 8 10 r ds(on) (m w w w w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =13a 25 c 125 c www.freescale.net.cn 3/6 AO4712 30v n-channel mosfet
typical electrical and thermal characteristics 0 2 4 6 8 10 0 5 10 15 20 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 300 600 900 1200 1500 0 5 10 15 20 25 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =15v i d =13a 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 11: single pulse power rating junction-to- ambient (note f) t a =25 c 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 10: maximum forward biased 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms figure 10: maximum forward biased safe operating area (note f) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 12: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =75 c/w www.freescale.net.cn 4/6 AO4712 30v n-channel mosfet
typical electrical and thermal characteristics 1 2 3 4 5 6 0 3 6 9 12 0 5 10 15 20 25 30 i rm (a) q rr (nc) i s (a) figure 15: diode reverse recovery charge and peak di/dt=800a/ m s 125oc 125oc 25oc 25oc q rr i rm 0 0.5 1 1.5 2 2.5 3 0 2 4 6 8 0 5 10 15 20 25 30 s t rr (ns) i s (a) figure 16: diode reverse recovery time and di/dt=800a/ m s 125oc 125oc 25oc 25oc t rr s 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 0 50 100 150 200 i r (a) temperature (c) figure 13: diode reverse leakage current vs. junction temperature v ds =15v v ds =30v 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 50 100 150 200 v sd (v) temperature (c) figure 14: diode forward voltage vs. junction temperature i s =1a 10a 20a 5a 40 figure 15: diode reverse recovery charge and peak current vs. conduction current 0 2 4 6 0 2 4 6 8 10 0 200 400 600 800 1000 i rm (a) q rr (nc) di/dt (a/ m mm m s) figure 17: diode reverse recovery charge and peak current vs. di/dt 125oc 125oc 25oc 25oc i s =20a q rr i rm figure 16: diode reverse recovery time and softness factor vs. conduction current 0 0.5 1 1.5 2 2.5 3 0 3 6 9 12 0 200 400 600 800 1000 s t rr (ns) di/dt (a/ m mm m s) figure 18: diode reverse recovery time and softness factor vs. di/dt 125oc 25oc 25oc 125oc i s =20a t rr s www.freescale.net.cn 5/6 AO4712 30v n-channel mosfet
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar vdd vgs vgs rg dut - + vdc vgs id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr www.freescale.net.cn 6/6 AO4712 30v n-channel mosfet
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